JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-5 displayed on this page of 5
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Chemical erosion yield of graphite simultaneously bombarded with energetic protons and thermal atomic hydrogens

;

Journal of Nuclear Materials, 120(1), p.119 - 121, 1984/02

https://doi.org/10.1016/0022-3115(84)90180-6
 Times Cited Count：14 Percentile：96.54(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Chemical sputtering

;

Oyo Butsuri, 53(3), p.217 - 221, 1984/00

http://joi.jlc.jst.go.jp/JST.Journalarchive/oubutsu1932/34.217

no abstracts in English

Journal Articles

On the reaction of graphite with atomic hydrogen

; *; *

Journal of Nuclear Materials, 116, p.206 - 210, 1983/00

https://doi.org/10.1016/0022-3115(83)90104-6
 Times Cited Count：2 Percentile：35.11(Materials Science, Multidisciplinary)

no abstracts in English

Oral presentation

Stress measurement of Si(111)7$$times$$7 reconstruction during atomic hydrogen adsorption

Uozumi, Yuki; Asaoka, Hidehito

no journal, , 

We have succeeded in measurements of the surface stress in Si(111) as a function of 7$$times$$7 reconstruction by comparison with the H-terminated Si(111) 1$$times$$1 surface. In order to obtain information on both the surface stress and the surface reconstruction simultaneously, we havecombined the surface-curvature and the reflection-high-electron-energy-diffraction instrumentations in an identical ultrahigh vacuum system. The stress evolution shows a decrease of tensile stresscorresponding to the formation of H-termination at the beginning of the atomic hydrogen exposure of Si(111) 7$$times$$7 surface. After the above treatment, a complete transformation of the surface structure occurs from the reconstructed surface to the 1$$times$$1 one. As a result, we find the Si(111) 1$$times$$1 surface releases 1.7 N/m (=J/m$$^{2}$$), or (1.4 eV/(1$$times$$1 unit cell)), of the surface energy from the strong tensile Si(111) 7$$times$$7 reconstruction.

Oral presentation

In-situ measurement of stress during Si(111) surface structure change

Uozumi, Yuki; Asaoka, Hidehito

no journal, , 

no abstracts in English

5 (Records 1-5 displayed on this page)
  • 1